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题名: Enhancement of electroluminescence in p-i-n structures with nano-crystalline Si/SiO2 multilayers
作者: Chen DY;  Wei DY;  Xu J;  Han PG;  Wang X;  Ma ZY;  Chen KJ;  Shi WH;  Wang QM
发表日期: 2008
摘要: Nano-crystalline Si/SiO2 multilayers were prepared by alternately changing the ultra-thin amorphous Si film deposition and the in situ plasma oxidation process followed by the post-annealing treatments. Well-defined periodic structures can be achieved with 2.5 nm thick SiO2 sublayers. It is shown that the size of formed nano-crystalline Si is about 3 nm. Room temperature electroluminescence can be observed and the spectrum contains two luminescence bands located at 650 nm and 520 nm. In order to improve the hole injection probability, p-i-n structures containing a nanocrystalline Si/SiO2 luminescent layer were designed and fabricated on different p-type substrates. It is found that the turn-on voltage of p-i-n structures is obviously reduced and the luminescence intensity increases by 50 times. It is demonstrated that the use of a heavy-doped p-type substrate can increase the luminescence intensity more efficiently compared with the light-doped p-type substrate due to the enhanced hole injection.
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Chen, DY ; Wei, DY ; Xu, J ; Han, PG ; Wang, X ; Ma, ZY ; Chen, KJ ; Shi, WH ; Wang, QM .Enhancement of electroluminescence in p-i-n structures with nano-crystalline Si/SiO2 multilayers ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2008 ,23(1): Art. No. 015013
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