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题名: GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers
作者: Yu SQ;  Cao Y;  Johnson SR;  Zhang YH;  Huang YZ
发表日期: 2008
摘要: Theoretical calculations of the mode characteristics of an equilateral-triangle resonator (ETR) with a 10 mu m cavity side length show that the fundamental mode, with longitudinal mode index of 25, has a wavelength of 2.185 mu m and a longitudinal mode separation of 100 nm. This mode has a quality factor (similar to 2x10(5)) that is much larger than the first (similar to 5x10(4)) and second (similar to 3x10(4)) order modes, indicating that single fundamental mode lasing should be accessible over a broad wavelength tuning range. An electrically injected ETR based on this design is fabricated from an InGaAsSb/AlGaAsSb/GaSb, graded-index separate-confinement heterostructure, laser diode wafer with a 2.1 mu m emission wavelength. This device achieved single mode, continuous wave operation at 77 K with a threshold current of 0.5 mA and a single mode wavelength tuning range of 3.25 nm, which is accomplished by varying the injection current from 0.5 to 6.0 mA. (C) 2008 American Vacuum Society.
KOS主题词: Chrysanthemum morifolium
刊名: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Yu, SQ ; Cao, Y ; Johnson, SR ; Zhang, YH ; Huang, YZ .GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers ,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2008 ,26(1): 56-61
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