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题名: Electronic structure of a hydrogenic acceptor impurity in semiconductor nano-structures
作者: Li, SS;  Xia, JB
发表日期: 2007
摘要: The electronic structure and binding energy of a hydrogenic acceptor impurity in 2, 1, and 0-dimensional semiconductor nano-structures (i.e. quantum well (QW), quantum well wire (QWW), and quantum dot (QD)) are studied in the framework of effective-mass envelope-function theory. The results show that (1) the energy levels monotonically decrease as the quantum confinement sizes increase; (2) the impurity energy levels decrease more slowly for QWWs and QDs as their sizes increase than for QWs; (3) the changes of the acceptor binding energies are very complex as the quantum confinement size increases; (4) the binding energies monotonically decrease as the acceptor moves away from the nano-structures' center; (5) as the symmetry decreases, the degeneracy is lifted, and the first binding energy level in the QD splits into two branches. Our calculated results are useful for the application of semiconductor nano-structures in electronic and photoelectric devices.
KOS主题词: Quantum dot
刊名: NANOSCALE RESEARCH LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Li, SS ; Xia, JB .Electronic structure of a hydrogenic acceptor impurity in semiconductor nano-structures ,NANOSCALE RESEARCH LETTERS,2007 ,2(11): 554-560
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