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题名: Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m
作者: Mao, RW;  Tsai, CS;  Yu, JZ;  Wang, QM
发表日期: 2008
摘要: A method for fabrication of long-wavelength narrow line-width InGaAs resonant cavity enhanced (RCE) photodetectors in a silicon substrate operating at the wavelength range of 1.3-1.6 mu m has been developed. A full width at half maximum (FWHM) of 0.7 nm and a peak responsivity of 0. 16 A/W at the resonance wavelength of 1.55 mu m have been accomplished by using a thick InP layer as part of the resonant cavity. The effects of roughness and tilt of the InP layer surface, and its free carrier absorption, as well as the thickness deviation of the mirror pair on the resonance wavelength shift and the peak quantum efficiency of the RCE photodetectors are analyzed in detail, and approaches for minimizing them toward superior performance are suggested. (C) 2007 Elsevier B.V. All rights reserved.
KOS主题词: photodetector;  line width
刊名: OPTICS COMMUNICATIONS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Mao, RW ; Tsai, CS ; Yu, JZ ; Wang, QM .Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m ,OPTICS COMMUNICATIONS,2008 ,281(6): 1582-1587
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