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题名: Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
作者: Wu, JJ;  Zhao, LB;  Zhang, GY;  Liu, XL;  Zhu, QS;  Wang, ZG;  Jia, QJ;  Guo, LP;  Hu, TD
发表日期: 2008
摘要: Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KOS主题词: Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Optical properties;  Surfactant;  Substrate;  Residual stresses;  Stress (mechanics);  Photoelasticity;  Thermal stresses;  Metric system;  Silicon;  Reduction;  Aluminum oxide
刊名: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wu, JJ ; Zhao, LB ; Zhang, GY ; Liu, XL ; Zhu, QS ; Wang, ZG ; Jia, QJ ; Guo, LP ; Hu, TD .Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) ,PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2008 ,205(2): 294-299
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