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题名: The growth temperatures dependence of optical and electrical properties of InN films
作者: Liu, B;  Zhang, R;  Xie, ZL;  Xiu, XQ;  Li, L;  Kong, JY;  Yu, HQ;  Han, P;  Gu, SL;  Shi, Y;  Zheng, YD;  Tang, CG;  Chen, YH;  Wang, ZG
发表日期: 2008
摘要: InN films grown on sapphire at different substrate temperatures from 550 degrees C to 700 degrees C by metalorganic chemical vapor deposition were investigated. The low-temperature GaN nucleation layer with high-temperature annealing (1100 degrees C) was used as a buffer for main InN layer growth. X-ray diffraction and Raman scattering measurements reveal that the quality of InN films can be improved by increasing the growth temperature to 600 degrees C. Further high substrate temperatures may promote the thermal decomposition of InN films and result in poor crystallinity and surface morphology. The photoluminescence and Hall measurements were employed to characterize the optical and electrical properties of InN films, which also indicates strong growth temperature dependence. The InN films grown at temperature of 600 degrees C show not only a high mobility with low carrier concentration, but also a strong infrared emission band located around 0.7 eV. For a 600 nm thick InN film grown at 600 degrees C, the Hall mobility achieves up to 938 cm(2)/Vs with electron concentration of 3.9 x 10(18) cm(-3).
KOS主题词: Metal organic chemical vapor deposition;  X-ray crystallography;  Photoluminescence
刊名: SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu, B ; Zhang, R ; Xie, ZL ; Xiu, XQ ; Li, L ; Kong, JY ; Yu, HQ ; Han, P ; Gu, SL ; Shi, Y ; Zheng, YD ; Tang, CG ; Chen, YH ; Wang, ZG .The growth temperatures dependence of optical and electrical properties of InN films ,SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY,2008 ,51(3): 237-242
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