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题名: Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga,Mn)As
作者: Zhou, R;  Sun, BQ;  Ruan, XZ;  Luo, HH;  Ji, Y;  Wang, WZ;  Zhang, F;  Zhao, JH
发表日期: 2008
摘要: Time resolved magneto-optic Kerr rotation measurements of optically induced spin quantum beats are performed on heavily doped bulk (Ga,Mn)As diluted magnetic semiconductors (DMS). An effective g-factor of about 0.2-0.3 over a wide range of temperature for both as-grown and annealed (Ga,Mn)As samples is obtained. A larger effective g-factor at lower temperature and an increase of the spin relaxation with increasing in-plane magnetic field are observed and attributed to the stronger p-d exchange interaction between holes and the localized magnetic ion spins, leading to a larger Zeeman splitting and heavy-hole-light-hole mixing. An abnormal dip structure of the g-factor in the vicinity of the Curie temperature suggests that the mean-field model is insufficient to describe the interactions and dynamics of spins in DMS because it neglects the short-range spin correlation effect. (c) 2008 American Institute of Physics.
KOS主题词: Gallium arsenide;  Heterostructures;  Alloys
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhou, R ; Sun, BQ ; Ruan, XZ ; Luo, HH ; Ji, Y ; Wang, WZ ; Zhang, F ; Zhao, JH .Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga,Mn)As ,JOURNAL OF APPLIED PHYSICS,2008 ,103(5): Art. No. 053901
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