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题名: Annihilation of deep level defects in InP through high temperature annealing
作者: Zhao, YW;  Dong, ZY
发表日期: 2008
摘要: Deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) have been used to investigate defects in semi-conducting and semi-insulating (SI) InP after high temperature annealing, respectively. The results indicate that the annealing in iron phosphide ambient has an obvious suppression effect of deep defects, when compared with the annealing in phosphorus ambient. A defect annihilation phenomenon has also been observed in Fe-doped SI-InP materials after annealing. Mechanism of defect formation and annihilation related to in-diffusion of iron and phosphorus is discussed. Nature of the thermally induced defects has been discussed based on the results. (c) 2007 Elsevier Ltd. All rights reserved.
KOS主题词: defect
刊名: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhao, YW ; Dong, ZY .Annihilation of deep level defects in InP through high temperature annealing ,JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,2008 ,69(39847): 551-554
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