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题名: High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth
作者: She-Song, H;  Zhi-Chuan, N;  Feng, Z;  Hai-Qiao, N;  Huan, Z;  Dong-Hai, W;  Zheng, S
发表日期: 2008
摘要: We develop a modified two-step method of growing high-density and narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. In the first step, high-density small InAs QDs are formed by optimizing the continuous deposition amount. In the second step, deposition is carried out with a long growth interruption for every 0.1 InAs monolayer. Atomic force microscope images show that the high-density (similar to 5.9x 10(10) CM-2) good size-uniformity InAs QDs are achieved. The strong intensity and narrow linewidth (27.7 meV) of the photoluminescence spectrum show that the QDs grown in this two-step method have a good optical quality.
KOS主题词: atomic layer deposition;  Quantum dots
刊名: CHINESE PHYSICS B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
She-Song, H ; Zhi-Chuan, N ; Feng, Z ; Hai-Qiao, N ; Huan, Z ; Dong-Hai, W ; Zheng, S .High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth ,CHINESE PHYSICS B,2008 ,17(1): 323-327
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