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题名: Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures
作者: Zhang, ML;  Wang, XL;  Xiao, HL;  Wang, CM;  Ran, JX;  Hu, GX
发表日期: 2008
摘要: AlGaN/GaN heterostructures have been irradiated by neutrons with different influences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques. It is found that the carrier mobility of two-dimensional electron gas (2DEG) is very sensitive to neutrons. At a low influence of 6.13 x 10(15) cm(-2), the carrier mobility drops sharply, while the sheet carrier density remains the same as that of an unirradiated sample. Moreover, even for a fluence of up to 3.66 x 10(16) cm(-2), the sheet carrier density shows only a slight drop. We attribute the degradation of the figure-of-merit (product of n(s) x mu) of 2DEG to the defects induced by neutron irradiation. Raman measurements show that neutron irradiation does not yield obvious change to the strain state of AlGaN/GaN heterostructures, which proves that degradation of sheet carrier density has no relation to strain relaxation in the present study. The increase of the product of n(s) x mu of 2DEG during rapid thermal annealing processes at relatively high temperature has been attributed to the activation of Ge-Ga transmuted from Ga and the recovery of displaced defects.
KOS主题词: Transportation;  proton
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang, ML ; Wang, XL ; Xiao, HL ; Wang, CM ; Ran, JX ; Hu, GX .Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures ,CHINESE PHYSICS LETTERS,2008 ,25(3): 1045-1048
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