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题名: The influence of Schottky contact metals on the strain of AlGaN barrier layers
作者: Lin, ZJ;  Zhao, JZ;  Corrigan, TD;  Wang, Z;  You, ZD;  Wang, ZG;  Lu, W
发表日期: 2008
摘要: Ir and Ni Schottky contacts on strained Al0.25Ga0.75N/GaN heterostructures, and the Ni Schottky contact with different areas on strained Al0.3Ga0.7N/GaN heterostructures have been prepared. Using the measured capacitance-voltage curves and the current-voltage curves obtained from the prepared Schottky contacts, the polarization charge densities of the AlGaN barrier layer for the Schottky contacts were analyzed and calculated by self-consistently solving Schrodinger's and Poisson's equations. It is found that the polarization charge density of the AlGaN barrier layer for the Ir Schottky contact on strained Al0.25Ga0.75N/GaN heterostructures is different from that of the Ni Schottky contact, and the polarization charge densities of the AlGaN barrier layer for Ni Schottky contacts with different areas on strained Al0.3Ga0.7N/GaN heterostructures are different corresponding to different Ni Schottky contact areas. As a result, the conclusion can be made that Schottky contact metals on strained AlGaN/GaN heterostructures have an influence on the strain of the AlGaN barrier layer. (C) 2008 American Institute of Physics.
KOS主题词: Heterostructures
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Lin, ZJ ; Zhao, JZ ; Corrigan, TD ; Wang, Z ; You, ZD ; Wang, ZG ; Lu, W .The influence of Schottky contact metals on the strain of AlGaN barrier layers ,JOURNAL OF APPLIED PHYSICS,2008 ,103(4): Art. No. 044503
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