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题名: Subtraction of scattering parameters for adiabatic intrinsic responses of semiconductor lasers
作者: Zhang, SJ;  Zhu, NH;  Liu, Y;  Liu, YZ
发表日期: 2008
摘要: Thermal effects will make chip temperature change with bias current of semiconductor lasers, which results in inaccurate intrinsic response by the conventional subtraction method. In this article, an extended subtraction method of scattering parameters for characterizing adiabatic responses of laser diode is proposed. The pulsed injection operation is used to determine the chip temperature of packaged semiconductor laser, and an optimal injection condition is obtained by investigating the dependence of the lasing wavelength on the width and period of the injection pulse in a relatively wide temperature range. In this case, the scattering parameters of laser diode are measured on adiabatic condition and the adiabatic intrinsic responses of packaged laser diode are first extracted. It is found that the adiabatic intrinsic responses are evidently superior to those without thermal consideration. The analysis results indicate that inclusion of thermal. effects is necessary to acquire accurate intrinsic responses of semiconductor lasers. (C) 2008 Wiley Periodicals, Inc.
KOS主题词: semiconductor laser
刊名: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang, SJ ; Zhu, NH ; Liu, Y ; Liu, YZ .Subtraction of scattering parameters for adiabatic intrinsic responses of semiconductor lasers ,MICROWAVE AND OPTICAL TECHNOLOGY LETTERS,2008 ,50(4): 992-995
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