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题名: A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector
作者: Zhou M;  Chang QY;  Zhao DG
发表日期: 2008
摘要: A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector is proposed. In comparision with conventional i-CaN/n(+)-GaN structure, an additional thin p-GaN cap layer is introduced on the i-GaN(n(-)-GaN) in the new structure. The simulation results showed that the additional layer makes the dark current to decrease in the photodetector due to the increase of the Schottky barrier height. The effects of thickness and carrier concentration of p-GaN layer on the dark current of the photodetector were also studied. It is suggested that the dark current of the new structure device could be better reduced by employing p-GaN with higher carrier concentration as the cap layer.
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhou, M ; Chang, QY ; Zhao, DG .A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector ,ACTA PHYSICA SINICA,2008 ,57(4): 2548-2553
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