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Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes
Zhang, Y; Han, CL; Gao, JF; Zhu, ZP; Wang, BQ; Zeng, YP; Zhang, Y, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: zhang_yang@semi.ac.cn
2008
Source PublicationCHINESE PHYSICS B
ISSN1674-1056
Volume17Issue:4Pages:1472-1474
AbstractThis paper investigates the dependence of current-voltage characteristics of AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes (RTDs) on spacer layer thickness. It finds that the peak and the valley current density J in the negative differential resistance (NDR) region depends strongly on the thickness of the spacer layer. The measured peak to valley current ratio of RTDs studied here is shown to improve while the current density through RTDs decreases with increasing spacer layer thickness below a critical value.
metadata_83[zhang yang; zhu zhan-ping; wang bao-qiang; zeng yi-ping] chinese acad sci, inst semicond, novel mat lab, beijing 100083, peoples r china; [han chun-lin; gao jian-feng] nanjing elect devices inst, state key lab monolith integrated circuit & modul, nanjing 210016, peoples r china
KeywordResonant Tunnelling Diode Molecular Beam Epitaxy
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2010-03-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/6738
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhang, Y, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: zhang_yang@semi.ac.cn
Recommended Citation
GB/T 7714
Zhang, Y,Han, CL,Gao, JF,et al. Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes[J]. CHINESE PHYSICS B,2008,17(4):1472-1474.
APA Zhang, Y.,Han, CL.,Gao, JF.,Zhu, ZP.,Wang, BQ.,...&Zhang, Y, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: zhang_yang@semi.ac.cn.(2008).Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes.CHINESE PHYSICS B,17(4),1472-1474.
MLA Zhang, Y,et al."Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes".CHINESE PHYSICS B 17.4(2008):1472-1474.
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