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题名: Fabrication of nanoscale metallic air-bridges by introducing a SiO2 sacrificial layer
作者: Zhang, Y;  Liu, J;  Li, Y;  Yang, FH
发表日期: 2007
摘要: A new method to fabricate nanoscale metallic air-bridges has been investigated. The pillar patterns of the air-bridge were defined on a SiO2, sacrificial layer by electron-beam lithography combined with inductively coupled plasma etching. Thereafter, the span (suspended part between the pillars) patterns were defined with a second electron-beam exposure on a PMMA/PMMA-MAA resist system. The fabrication process was completed by subsequent metal electron-beam evaporation, lift-off in acetone, and removal of the sacrificial layer in a buffered hydrofluoric (HF) solution. Air-bridges with two different geometries (line-shaped and cross-shaped) were studied in detail. The narrowest width of the air-bridges was around 200 nm, and the typical length of the air-bridges was 2-5 mu m. The advantages of our method are the simplicity of carrying out electron-beam exposure with good reproducibility and the capability of more accurate control of the pillar sizes and shapes of the air-bridge. (C) 2007 Elsevier Ltd. All rights reserved.
KOS主题词: Lithography, Electron beam
刊名: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang, Y ; Liu, J ; Li, Y ; Yang, FH .Fabrication of nanoscale metallic air-bridges by introducing a SiO2 sacrificial layer ,MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2007 ,10(39908): 194-199
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