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题名: Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements
作者: Liu, HY;  Meng, ZM;  Dai, QF;  Wu, LJ;  Guo, Q;  Hu, W;  Liu, SH;  Lan, S;  Yang, T
发表日期: 2008
摘要: We investigate the dependence of the differential reflection on the structure parameters of quantum dot (QD) heterostructures in pump-probe reflection measurements by both numerical simulations based on the finite-difference time-domain technique and theoretical calculations based on the theory of dielectric films. It is revealed that the value and sign of the differential reflection strongly depend on the thickness of the cap layer and the QD layer. In addition, a comparison between the carrier dynamics in undoped and p-doped InAs/GaAs QDs is carried out by pump-probe reflection measurements. The carrier capture time from the GaAs barrier into the InAs wetting layer and that from the InAs wetting layer into the InAs QDs are extracted by appropriately fitting differential reflection spectra. Moreover, the dependence of the carrier dynamics on the injected carrier density is identified. A detailed analysis of the carrier dynamics in the undoped and p-doped QDs based on the differential reflection spectra is presented, and its difference with that derived from the time-resolved photoluminescence is discussed. (C) 2008 American Institute of Physics.
KOS主题词: Capture;  River capture;  Phonon;  Gallium arsenide;  Temperature;  Dependency;  Density;  Time
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu, HY ; Meng, ZM ; Dai, QF ; Wu, LJ ; Guo, Q ; Hu, W ; Liu, SH ; Lan, S ; Yang, T .Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements ,JOURNAL OF APPLIED PHYSICS,2008 ,103(8): Art. No. 083121
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