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题名: Effects of accumulated strain on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot structures
作者: Yang T;  Tatebayashi J;  Nishioka M;  Arakawa Y
发表日期: 2008
摘要: We report the effects of accumulated strain by stacking on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot (QD) structures grown by MOCVD. It is found that the surface of the stacked QD structures becomes more and more undulated with stacking, due to the increased strain in the stacked QD structures with stacking. The photoluminescence intensity from the QD structures first increases as the stacking number increases from 1 to 3 and then dramatically decreases as it further increases, implying a significant increase in the density of crystal defects in the stacked QD structures due to the accumulated strain. Furthermore, we demonstrate that the strain can be reduced by simply introducing annealing steps just after growing the GaAs spacers during the deposition of the stacked QD structures, leading to significant improvement in the surface and optical properties of the structures. (C) 2007 Elsevier B.V. All rights reserved.
刊名: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Yang, T ; Tatebayashi, J ; Nishioka, M ; Arakawa, Y .Effects of accumulated strain on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot structures ,PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2008 ,40(6): 2182-2184
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