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题名: Structural characterization of mn implanted AlInN
作者: Majid A;  Ali A;  Zhu JJ;  Wang YT
发表日期: 2008
摘要: AlInN/GaN thin films were implanted with Mn ions and subsequently annealed isochronically at 750 and 850 degrees C. X-ray diffraction and Rutherford backscattering spectroscopy (RBS) techniques were employed to study the microstructural properties of the implanted/annealed samples. The effect of annealing on implantation-induced strain in thin films has been studied in detail. The strain was found to increase with dose until it reached a saturation value and after that it started decreasing with a further increase in the dose. RBS measurements indicated the atomic diffusion of In, Al, Ga and Mn in implanted samples. The in- and out-diffusion of atoms has been observed after annealing at 750 degrees C and 850 degrees C, respectively. Strong decomposition of the samples took place when annealed at 850 degrees C.
KOS主题词: Ion implantation
刊名: JOURNAL OF PHYSICS D-APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Majid A ; Ali A ; Zhu JJ ; Wang YT .Structural characterization of mn implanted AlInN ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,2008 ,41(11): Art. No. 115404
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