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题名: Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications
作者: Zhao, YM;  Sun, GS;  Ning, J;  Liu, XF;  Zhao, WS;  Wang, L;  Li, JM
发表日期: 2008
摘要: Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition (LPCVD) with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction (XRD) patterns indicate that the deposited films are highly textured (111) orientation. The surface morphology and roughness are determined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface features are spherulitic texture with average grain size of 100 nm, and the rms roughness is 20nm (AFM 5 x 5 mu m images). Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems (MEMS) devices such as SiC based filters.
KOS主题词: Chemical vapor deposition;  atomic layer deposition;  Vapor-plating
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhao, YM ; Sun, GS ; Ning, J ; Liu, XF ; Zhao, WS ; Wang, L ; Li, JM .Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications ,CHINESE PHYSICS LETTERS,2008 ,25(6): 2269-2272
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