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题名: Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well
作者: Yang, L;  Motohisa, J;  Tomioka, K;  Takeda, J;  Fukui, T;  Geng, MM;  Jia, LX;  Zhang, L;  Liu, YL
发表日期: 2008
摘要: Hexagonal nanopillars with a single InGaAs/GaAs quantum well (QW) were fabricated on a GaAs (111) B substrate by selective-area metal-organic vapor phase epitaxy. The standard deviations in diameter and height of the nanopillars are about 2% and 5%, respectively. Zincblende structure and rotation twins were identified in both the GaAs and the InGaAs layers by electron diffraction. The excitation-power-density-dependent micro-photoluminescence (mu-PL) of the nanopillars was measured at 4.2, 50, 100 and 150 K. It was shown that, with increasing excitation power density, the mu-PL peak's positions shift to a higher energy, and their intensity and width increase, which were rationalized using a model that includes the effects of piezoelectricity, photon-screening and band-filling. It was also revealed that the rotation twins significantly reduce the diffusion length of the carriers in the nanopillars, compared to that in the regular semiconductors.
KOS主题词: Optical properties;  Epitaxy;  Nanowires;  Intensity;  Heraldry;  Gallium arsenide
刊名: NANOTECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Yang, L ; Motohisa, J ; Tomioka, K ; Takeda, J ; Fukui, T ; Geng, MM ; Jia, LX ; Zhang, L ; Liu, YL .Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well ,NANOTECHNOLOGY,2008 ,19(27): Art. No. 275304
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