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题名: The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure
作者: Guo, LC;  Wang, XL;  Wang, CM;  Mao, HL;  Ran, JX;  Luo, WJ;  Wang, XY;  Wang, BZ;  Fang, CB;  Hu, GX
发表日期: 2008
摘要: The sheet carrier concentrations, conduction band profiles and amount of free carriers in the barriers have been determined by solving coupled Schrodinger and Poisson equation self-consistently for coherently grown Al0.3Ga0.7N/GaN and Al0.3Ga0.7N/AlN/GaN structures on thick GaN. The Al0.3Ga0.7N/GaN heterojunction structures with and without 1 nm AlN interlayer have been grown by MOCVD on sapphire substrate, the physical properties for these two structures have been investigated by various instruments such as Hall measurement and X-ray diffraction. By comparison of the theoretical and experimental results, we demonstrate that the sheet carrier concentration and the electrons mobility would be improved by the introduction of an AlN interlayer for Al0.3Ga0.7N/GaN structure. Mechanisms for the increasing of the sheet carrier concentration and the electrons mobility will be discussed in this paper. (C) 2007 Elsevier Ltd. All rights reserved.
KOS主题词: Modulation-doped field-effect transistors;  Electron gas;  Migration, Internal;  electromagnetic wave polarisation
刊名: MICROELECTRONICS JOURNAL
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Guo, LC ; Wang, XL ; Wang, CM ; Mao, HL ; Ran, JX ; Luo, WJ ; Wang, XY ; Wang, BZ ; Fang, CB ; Hu, GX .The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure ,MICROELECTRONICS JOURNAL,2008 ,39(5): 777-781
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