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题名: Carrier spin relaxation in (Ga, Mn) As at room temperature
作者: Liu, XD;  Wang, WZ;  Gao, RX;  Zhao, JH;  Wen, JH;  Lin, WZ;  Lai, TS
发表日期: 2008
摘要: In this paper, the excitation energy density dependence of carrier spin relaxation is studied at room temperature for the as-grown and annealed (Ga, Mn) As samples using femtosecond time-resolved pump-probe Kerr spectroscopy. It is found that spin relaxation lifetime of electrons lengthens with increasing excitation energy density for both samples, and the annealed ( Ga, Mn) As has shorter carrier recombination and electron spin relaxation lifetimes as well as larger Kerr rotation angle than the as-grown ( Ga. Mn) As under the same excitation condition. which shows that DP mechanism is dominant in the spin relaxation process for ( Ga, Mn)As at room temperature. The enhanced ultrafast Kerr effect in the annealed (Ga,Mn)As shows the potential application of the annealed ( Ga, Mn) As in ultrafast all-optical spin switches, and also provides a further evidence for the p-d exchange mechanism of the ferromagnetic origin of (Ga, Mn) As.
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu, XD ; Wang, WZ ; Gao, RX ; Zhao, JH ; Wen, JH ; Lin, WZ ; Lai, TS .Carrier spin relaxation in (Ga, Mn) As at room temperature ,ACTA PHYSICA SINICA,2008 ,57(6): 3857-3861
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