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题名: Strong visible and infrared photoluminescence from Er-implanted silicon nitride films
作者: Ding WC;  Hu D;  Zheng J;  Chen P;  Cheng BW;  Yu JZ;  Wang QM
发表日期: 2008
摘要: Silicon nitride films were deposited by plasma-enhanced chemical-vapour deposition. The films were then implanted with erbium ions to a concentration of 8 x 10(20) cm(-3). After high temperature annealing, strong visible and infrared photoluminescence (PL) was observed. The visible PL consists mainly of two peaks located at 660 and 750 nm, which are considered to originate from silicon nanocluster (Si-NCs) and Si-NC/SiNx interface states. Raman spectra and HRTEM measurements have been performed to confirm the existence of Si-NCs. The implanted erbium ions are possibly activated by an energy transfer process, leading to a strong 1.54 mu m PL.
刊名: JOURNAL OF PHYSICS D-APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Ding, WC ; Hu, D ; Zheng, J ; Chen, P ; Cheng, BW ; Yu, JZ ; Wang, QM .Strong visible and infrared photoluminescence from Er-implanted silicon nitride films ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,2008 ,41(13): Art. No. 135101
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