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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Study of GaN growth on ultra-thin Si membranes
作者: Wang X;  Wu AM;  Chen J;  Wang X;  Wu YX;  Zhu JJ;  Yang H
发表日期: 2008
摘要: 10 mu m-thick ultra-thin Si (111) membranes for GaN epi-layers growth were successfully fabricated on silicon-on-insulator (SOI) substrate by backside etching the handle Si and buried oxide (BOX) layer. Then 1 mu m-thick GaN layers were deposited on these Si membranes by metal-organic chemical vapor deposition (MOCVD). The crack-free areas of 250 mu m, x 250 mu m were obtained on the GaN layers due to the reduction of thermal stress by using these ultra-thin Si membranes, which was further confirmed by the photoluminescence (PL) spectra and the simulation results from the finite element method calculation by using the software of ANSYS. In this paper, a newly developed approach was demonstrated to utilize micromechanical structures for GaN growth, which would improve the material quality of the epi-layers and facilitate GaN-based micro electro-mechanical system (MEMS) fabrication, especially the pressure sensor, in the future applications. (C) 2008 Elsevier Ltd. All rights reserved.
刊名: SOLID-STATE ELECTRONICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang, X ; Wu, AM ; Chen, J ; Wang, X ; Wu, YX ; Zhu, JJ ; Yang, H .Study of GaN growth on ultra-thin Si membranes ,SOLID-STATE ELECTRONICS,2008 ,52(6): 986-989
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