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题名: Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching
作者: Gao, HY;  Yan, FW;  Zhang, Y;  Li, JM;  Zeng, YP;  Wang, GH
发表日期: 2008
摘要: Sapphire substrates patterned by a selective chemical wet and an inductively coupled plasma (ICP) etching technique was proposed to improve the performance of GaN-based light-emitting diodes (LEDs). GaN-based LEDs were fabricated on sapphire substrates through metal organic chemical vapor deposition (MOCVD). The LEDs fabricated on the patterned substrates exhibit improved device performance compared with the conventional LED fabricated on planar substrates when growth and device fabricating conditions were the same. The light output powers of the LEDs fabricated on wet-patterned and ICP-patterned substrates were about 37% and 17% higher than that of LEDs on planar substrates at an injection current of 20 mA, respectively. The enhancement is attributable to the combination of the improvement of GaN-based epilayers quality and the improvement of the light extraction efficiency. (c) 2008 Elsevier Ltd. All rights reserved.
KOS主题词: Light emitting diodes
刊名: SOLID-STATE ELECTRONICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Gao, HY ; Yan, FW ; Zhang, Y ; Li, JM ; Zeng, YP ; Wang, GH .Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching ,SOLID-STATE ELECTRONICS,2008 ,52(6): 962-967
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