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题名: High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz
作者: Wang, XL;  Chen, TS;  Xiao, HL;  Wang, CM;  Hu, GX;  Luo, WJ;  Tang, J;  Guo, LC;  Li, JM
发表日期: 2008
摘要: Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in semi-insulating (SI) 6H-SiC substrate by metal-organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Omega/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 9 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. (c) 2008 Elsevier Ltd. All rights reserved.
KOS主题词: SIC;  social dominance
刊名: SOLID-STATE ELECTRONICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang, XL ; Chen, TS ; Xiao, HL ; Wang, CM ; Hu, GX ; Luo, WJ ; Tang, J ; Guo, LC ; Li, JM .High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz ,SOLID-STATE ELECTRONICS,2008 ,52(6): 926-929
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