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题名: Enhancement of field emission properties in La-doped ZnO films prepared by magnetron sputtering
作者: Li, J;  Wang, RZ;  Lan, W;  Zhang, XW;  Duan, ZQ;  Wang, B;  Yan, H
发表日期: 2008
摘要: Field emissions (FE) from La-doped zinc oxide (ZnO) films are both experimentally and theoretically investigated. Owing to the La-doped effect, the FE characteristic of ZnO films is remarkably enhanced compared with an undoped sample, and a startling low turn-on electric field of about 0.4 V/mu m (about 2.5 V/mu m for the undoped ZnO films) is obtained at an emission current density of 1 mu A/cm(2) and the stable current density reaches 1 mA/cm(2) at an applied field of about 2.1 V/mu m. A self-consistent theoretical analysis shows that the novel FE enhancement of the La-doped sample may be originated from its smaller work function. Due to the effect of doping with La, the Fermi energy level lifts, electrons which tunnelling from surface barrier are consumedly enhancing, and then leads to a huge change of field emission current. Interestingly, it suggests a new effective method to improve the FE properties of film materials.
KOS主题词: work function;  Thin films;  Degradation (chemical);  Deterioration;  Microscopy;  Acoustic microscopes
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Li, J ; Wang, RZ ; Lan, W ; Zhang, XW ; Duan, ZQ ; Wang, B ; Yan, H .Enhancement of field emission properties in La-doped ZnO films prepared by magnetron sputtering ,CHINESE PHYSICS LETTERS,2008 ,25(7): 2657-2660
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