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题名: A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs
作者: Jiang, XW;  Deng, HX;  Luo, JW;  Li, SS;  Wang, LW
发表日期: 2008
摘要: A fully 3-D atomistic quantum mechanical simulation is presented to study the random dopant-induced effects in nanometer metal-oxide-semiconductor field-effect transistors. The empirical pseudopotential is used to represent the single particle Hamiltonian, and the linear combination of bulk band method is used to solve the million atom Schrodinger equation. The gate threshold fluctuation and lowering due to the discrete dopant configurations are studied. It is found that quantum mechanical effects increase the threshold fluctuation while decreasing the threshold lowering. The increase of threshold fluctuation is in agreement with the researchers' early study based on an approximated density gradient approach. However, the decrease in threshold lowering is in contrast with the density gradient calculations.
KOS主题词: Metal oxide semiconductor field-effect transistors;  Field-effect transistors;  Threshold;  3-D
刊名: IEEE TRANSACTIONS ON ELECTRON DEVICES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Jiang, XW ; Deng, HX ; Luo, JW ; Li, SS ; Wang, LW .A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs ,IEEE TRANSACTIONS ON ELECTRON DEVICES,2008 ,55(7): 1720-1726
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