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题名: Fabrication and characterization of GaN-based LEDs grown on nanopatterned sapphire substrates
作者: Gao, HY;  Yan, FW;  Zhang, Y;  Li, JM;  Zeng, YP;  Wang, GH
发表日期: 2008
摘要: Sapphire substrates were nanopatterned by dry (inductively coupled plasma, ICP) etching to improve the performance of GaN-based light-emitting diodes (LEDs). GaN-based LEDs on nanopatterned sapphire substrates (NPSS) were fabricated by metal organic chemical vapor deposition (MOCVD). The characteristics of LEDs fabricated on NPSS prepared by dry etching were studied. The light output power and wall-plug efficiency of the LEDs fabricated on NPSS were greater than those of the conventional LEDs fabricated on common planar sapphire substrates when the injection currents were the same. The LEDs on NPSS and common planar sapphire substrates have similar I-V characteristics.
KOS主题词: Light emitting diodes;  improvement;  Nitrides;  wet
刊名: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Gao, HY ; Yan, FW ; Zhang, Y ; Li, JM ; Zeng, YP ; Wang, GH .Fabrication and characterization of GaN-based LEDs grown on nanopatterned sapphire substrates ,PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2008 ,205(7): 1719-1723
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