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题名: MOCVD growth of InN using a GaN buffer
作者: Wang LL;  Wang H;  Chen J;  Sun X;  Zhu JJ;  Jiang DS;  Yang H;  Liang JW
发表日期: 2008
摘要: We have investigated MOCVD growth of InN oil sapphire with and without a GaN buffer between 490 and 520 degrees C. The buffer significantly improves the surface morphological uniformity and electrical properties of InN epilayers. Characterization of the as-grown epilayers with the buffer reveals that kinetics-limited islands are formed at lower temperatures, whereas islands with equilibrium shape are obtained at higher temperatures. Below 520 degrees C, increasing temperature improves structural quality but degrades electrical properties. Hall data from this study Suggest that V-N-related defects/impurities are the possible donor species and compensation varies with charged dislocation acceptors. We believe that reducing carrier concentration and dislocation density is effective to increase the Hall mobility of InN. (C) 2007 Elsevier Ltd. All rights reserved.
KOS主题词: Surface
刊名: SUPERLATTICES AND MICROSTRUCTURES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang, LL ; Wang, H ; Chen, J ; Sun, X ; Zhu, JJ ; Jiang, DS ; Yang, H ; Liang, JW .MOCVD growth of InN using a GaN buffer ,SUPERLATTICES AND MICROSTRUCTURES,2008 ,43(2): 81-85
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