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题名: Smart universal multiple-valued logic gates by transferring single electrons
作者: Zhang, WC;  Wu, NJ
发表日期: 2008
摘要: This paper proposes smart universal multiple-valued (MV) logic gates by transferring single electrons (SEs). The logic gates are based on MOSFET based SE turnstiles that can accurately transfer SEs with high speed at high temperature. The number of electrons transferred per cycle by the SE turnstile is a quantized function of its gate voltage, and this characteristic is fully exploited to compactly finish MV logic operations. First, we build arbitrary MV literal gates by using pairs of SE turnstiles. Then, we propose universal MV logic-to-value conversion gates and MV analog-digital conversion circuits. We propose a SPICE model to describe the behavior of the MOSFET based SE turnstile. We simulate the performances of the proposed gates. The MV logic gates have small number of transistors and low power dissipations.
KOS主题词: Many-valued logic
刊名: IEEE TRANSACTIONS ON NANOTECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang, WC ; Wu, NJ .Smart universal multiple-valued logic gates by transferring single electrons ,IEEE TRANSACTIONS ON NANOTECHNOLOGY,2008 ,7(4): 440-450
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