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题名: Electroluminescence from nano-crystalline Si/SiO2 structures embedded in pn junctions
作者: Chen DY;  Wang X;  Wei DY;  Wang T;  Xu J;  Ma ZY;  Li W;  Chen KJ;  Shi WH;  Wang QM
发表日期: 2008
摘要: Phosphorous-doped and boron-doped amorphous Si thin films as well as amorphous SiO2/Si/SiO2 sandwiched structures were prepared in a plasma enhanced chemical vapor deposition system. Then, the p-i-n structures containing nano-crystalline Si/SiO2 sandwiched structures as the intrinsic layer were prepared in situ followed by thermal annealing. Electroluminescence spectra were measured at room temperature under forward bias, and it is found that the electroluminescence intensity is strongly influenced by the types of substrate. The turn-on voltages can be reduced to 3 V for samples prepared on heavily doped p-type Si (p(+)-Si) substrates and the corresponding electroluminescence intensity is more than two orders of magnitude stronger than that on lightly doped p-type Si (p-Si) and ITO glass substrates. The improvements of light emission can be ascribed to enhanced hole injection and the consequent recombination of electron-hole pairs in the luminescent nanocrystalline Si/SiO2 system. (C) 2008 Elsevier Ltd. All rights reserved.
刊名: SUPERLATTICES AND MICROSTRUCTURES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Chen, DY ; Wang, X ; Wei, DY ; Wang, T ; Xu, J ; Ma, ZY ; Li, W ; Chen, KJ ; Shi, WH ; Wang, QM .Electroluminescence from nano-crystalline Si/SiO2 structures embedded in pn junctions ,SUPERLATTICES AND MICROSTRUCTURES,2008 ,44(2): 160-165
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