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题名: Improved light extraction of GaN-based LEDs with nano-roughened p-GaN surfaces
作者: Gao, HY;  Yan, FW;  Fan, ZC;  Li, JM;  Zeng, YP;  Wang, GH
发表日期: 2008
摘要: p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based light emitting diodes (LEDs). The nano-roughened GaN present a relaxation of stress. The light extraction of the LEDs with nano-roughened surfaces is greatly improved when compared with that of the conventional LEDs without nano-roughening. PL-mapping intensities of the nano-roughened LED epi-wafers for different roughening times present two to ten orders of enhancement. The light output powers are also higher for the nano-roughened LED devices. This improvement is attributed to that nano-roughened surfaces can provide photons multiple chances to escape from the LED surfaces.
KOS主题词: Efficiency;  Output
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Gao, HY ; Yan, FW ; Fan, ZC ; Li, JM ; Zeng, YP ; Wang, GH .Improved light extraction of GaN-based LEDs with nano-roughened p-GaN surfaces ,CHINESE PHYSICS LETTERS,2008 ,25(9): 3448-3451
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