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题名: High-temperature AlN interlayer for crack-free AlGaN growth on GaN
作者: Sun, Q;  Wang, JT;  Wang, H;  Jin, RQ;  Jiang, DS;  Zhu, JJ;  Zhao, DG;  Yang, H;  Zhou, SQ;  Wu, MF;  Smeets, D;  Vantomme, A
发表日期: 2008
摘要: This paper presents a study of the transformation of high-temperature AlN (HT-AlN) interlayer (IL) and its effect on the strain relaxation of Al0.25Ga0.75N/HT-AlN/GaN. The HT-AlN IL capped with Al0.25Ga0.75N transforms into AlGaN IL in which the Al composition increases with the HT-AlN IL thickness while the total Ga content keeps nearly constant. During the HT-AlN IL growth on GaN, the tensile stress is relieved through the formation of V trenches. The filling up of the V trenches by the subsequent Al0.25Ga0.75N growth is identified as the Ga source for the IL transformation, whose effect is very different from a direct growth of HT-AlGaN IL. The a-type dislocations generated during the advancement of V trenches and their filling up propagate into the Al0.25Ga0.75N overlayer. The a-type dislocation density increases dramatically with the IL thickness, which greatly enhances the strain relaxation of Al0.25Ga0.75N. (c) 2008 American Institute of Physics.
KOS主题词: Residual stresses;  Stress (mechanics);  Photoelasticity;  Thermal stresses;  Reduction;  Thickness
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sun, Q ; Wang, JT ; Wang, H ; Jin, RQ ; Jiang, DS ; Zhu, JJ ; Zhao, DG ; Yang, H ; Zhou, SQ ; Wu, MF ; Smeets, D ; Vantomme, A .High-temperature AlN interlayer for crack-free AlGaN growth on GaN ,JOURNAL OF APPLIED PHYSICS,2008 ,104(4): Art. No. 043516
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