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题名: Photoelectric characteristics of metal/InGaN/GaN heterojunction structure
作者: Sun, X;  Liu, WB;  Jiang, DS;  Liu, ZS;  Zhang, S;  Wang, LL;  Wang, H;  Zhu, JJ;  Duan, LH;  Wang, YT;  Zhao, DG;  Zhang, SM;  Yang, H
发表日期: 2008
摘要: A heterojunction structure photodetector was fabricated by evaporating a semitransparent Ni/Au metal film oil the InGaN/GaN structure. The photocurrent (PC) spectra show that both the Schottky junction (NiAu/InGaN) and the InGaN/GaN isotype heterojunction contribute to the PC signal which suggests that two junctions are connected in series and result in a broader spectral response of the device. Secondary electron, cathodoluminescence and electron-beam-induced current images measured from the same area of the edge surface clearly reveal the profile of the layer structure and distribution of the built-in electric field around the two junctions. A band diagram of the device is drawn based oil the consideration of the polarization effect at the InGaN/GaN interface. The analysis is consistent with the physical mechanism of a tandem structure of two junctions connected in series.
刊名: JOURNAL OF PHYSICS D-APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sun, X ; Liu, WB ; Jiang, DS ; Liu, ZS ; Zhang, S ; Wang, LL ; Wang, H ; Zhu, JJ ; Duan, LH ; Wang, YT ; Zhao, DG ; Zhang, SM ; Yang, H .Photoelectric characteristics of metal/InGaN/GaN heterojunction structure ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,2008 ,41(16): Art. No. 165108
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