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题名: Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector
作者: Zhang, S;  Zhao, DG;  Jiang, DS;  Liu, WB;  Duan, LH;  Wang, YT;  Zhu, JJ;  Liu, ZS;  Zhang, SM;  Yang, H
发表日期: 2008
摘要: The unexpected decrease in measured responsivity observed in a specific GaN Schottky barrier photodetector (PD) at high reverse bias voltage was investigated and explained. Device equivalent transforms and small signal analysis were performed to analyse the test circuit. On this basis, a model was built which explained the responsivity decrease quantitatively. After being revised by this model, responsivity curves varying with bias voltage turned out to be reasonable. It is proved that the decrease is related to the dynamic parallel resistance of the photodiode. The results indicate that with a GaN Schottky PD, the choice of load resistance is restricted according to the dynamic parallel resistance of the device to avoid responsivity decay at high bias voltage.
KOS主题词: Ultraviolet detectors
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang, S ; Zhao, DG ; Jiang, DS ; Liu, WB ; Duan, LH ; Wang, YT ; Zhu, JJ ; Liu, ZS ; Zhang, SM ; Yang, H .Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2008 ,23(10): Art. No. 105015
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