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题名: Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2
作者: Ma, P;  Gai, YQ;  Wang, JX;  Yang, FH;  Zeng, YP;  Li, JM;  Li, JB
发表日期: 2008
摘要: InGaN/GaN multi-quantum-well blue (461 +/- 4 nm) light emitting diodes with higher electroluminescence intensity are obtained by postgrowth thermal annealing at 720 C in O-2-ambient. Based on our first-principle total-energy calculations, we conclude that besides dissociating the Mg-H complex by forming H2O, annealing in O-2 has another positive effect on the activation of acceptor Mg in GaN. Mg can be further activated by the formation of an impurity band above the valence band maximum of host GaN from the passivated Mg-Ga-O-N complex. Our calculated ionization energy for acceptor Mg in the passivated system is about 30 meV shallower than that in pure GaN, in good agreement with previous experimental measurement. Our model can explain that the enhanced electroluminescence intensity of InGaN/GaN MQWs based on Mg-doped p-type GaN is due to a decrease in the ionization energy of Mg acceptor with the presence of oxygen. (C) 2008 American Institute of Physics.
KOS主题词: atomic layer deposition;  Vapor phase epitaxy;  Electrical properties;  Oxygen;  ACTIVATION;  Silicon
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Ma, P ; Gai, YQ ; Wang, JX ; Yang, FH ; Zeng, YP ; Li, JM ; Li, JB .Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 ,APPLIED PHYSICS LETTERS,2008 ,93(10): Art. No. 102112
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