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题名: Raman scattering characterization of Mn composition and strain in Ga1-xMnxSb/GaSb epitaxial layers
作者: Islam MR;  Chen NF;  Yamada M
发表日期: 2008
摘要: Raman scattering (RS) experiments have been performed for simultaneous determination of Mn composition and strain in Ga1-xMnxSb thin films grown on GaSb substrate by liquid phase epitaxy technique. The Raman spectra obtained from various Ga1-xMnxSb samples show only GaSb-like phonon modes whose frequency positions are found to have Mn compositional dependence. With the combination of epilayer strain model, RS and energy dispersive x-ray (EDX) experiments, the compositional dependence of GaSb-like LO phonon frequency is proposed both in strained and unstrained conditions. The proposed relationships are used to evaluate Mn composition and strain from the Ga1-xMnxSb samples. The results obtained from the RS data are found to be in good agreement with those determined independently by the EDX analysis. Furthermore, the frequency positions of MnSb-like phonon modes are suggested by reduced-mass model. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
KOS主题词: Raman effect
刊名: CRYSTAL RESEARCH AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Islam, MR ; Chen, NF ; Yamada, M .Raman scattering characterization of Mn composition and strain in Ga1-xMnxSb/GaSb epitaxial layers ,CRYSTAL RESEARCH AND TECHNOLOGY,2008 ,43(10): 1091-1096
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