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题名: Structural, electrical, and optical properties of InAsxSb1-x epitaxial films grown by liquid-phase epitaxy
作者: Gao FB;  Chen NF;  Zhang XW;  Wang Y;  Liu L;  Yin ZG;  Wu JL
发表日期: 2008
摘要: The InAsxSb1-x films were grown on (100) GaSb substrates by liquid-phase epitaxy, and their structural, electrical, and optical properties were investigated. The high-resolution x-ray diffraction results reveal that the single crystalline InAsxSb1-x films with a midrange composition are epitaxially grown on the GaSb substrates. Temperature dependence of the Hall mobility was theoretically modeled by considering several predominant scattering mechanisms. The results indicate that ionized impurity and dislocation scatterings dominate at low temperatures, while polar optical phonon scattering is important at room temperature (RT). Furthermore, the InAsxSb1-x films with the higher As composition exhibit the better crystalline quality and the higher mobility. The InAs0.35Sb0.65 film exhibits a Hall mobility of 4.62x10(4) cm(2) V-1 s(-1). The cutoff wavelength of photoresponse is extended to about 12 mu m with a maximum responsivity of 0.21 V/W at RT, showing great potential for RT long-wavelength infrared detection. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2989116]
KOS主题词: atomic layer deposition
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Gao, FB ; Chen, NF ; Zhang, XW ; Wang, Y ; Liu, L ; Yin, ZG ; Wu, JL .Structural, electrical, and optical properties of InAsxSb1-x epitaxial films grown by liquid-phase epitaxy ,JOURNAL OF APPLIED PHYSICS,2008 ,104(7): Art. No. 073712
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