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题名: High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns
作者: Peng, JY;  Tan, HM;  Wang, YG;  Ma, XY;  Miao, JG;  Wang, BS;  Qian, LS
发表日期: 2008
摘要: We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO4 laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In0.25Ga0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 mu m thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm, thick laser crystal and a 1 mm thick laser crystal, respectively. (C) 2007 Elsevier GmbH. All rights reserved.
KOS主题词: Gallium arsenide
刊名: OPTIK
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Peng, JY ; Tan, HM ; Wang, YG ; Ma, XY ; Miao, JG ; Wang, BS ; Qian, LS .High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns ,OPTIK,2008 ,119(14): 657-660
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