高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region
作者: Zhang JY;  Cai LE;  Zhang BP;  Li SQ;  Lin F;  Shang JZ;  Wang DX;  Lin KC;  Yu JZ;  Wang QM
发表日期: 2008
摘要: We have fabricated and characterized GaN-based vertical cavity surface emitting lasers (VCSELs) with a unique active region structure, in which three sets of InGaN asymmetric coupled quantum wells are placed in a half-wavelength (0.5 lambda) length. Lasing action was achieved under optical pumping at room temperature with a threshold pumping energy density of about 6.5 mJ/cm(2). The laser emitted a blue light at 449.5 nm with a narrow linewidth below 0.1 nm and had a high spontaneous emission factor of about 3.0x10(-2). The results indicate that this active region structure is useful in reducing the process difficulties and improving the threshold characteristics of GaN-based VCSELs.
KOS主题词: Gallium compounds
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
333.pdf335KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Zhang, JY ; Cai, LE ; Zhang, BP ; Li, SQ ; Lin, F ; Shang, JZ ; Wang, DX ; Lin, KC ; Yu, JZ ; Wang, QM .Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region ,APPLIED PHYSICS LETTERS,2008 ,93(19): Art. No. 191118
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Zhang JY]的文章
 [Cai LE]的文章
 [Zhang BP]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Zhang JY]的文章
 [Cai LE]的文章
 [Zhang BP]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发