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题名: Dislocation scattering in AlxGa1-xN/GaN heterostructures
作者: Xu, XQ;  Liu, XL;  Han, XX;  Yuan, HR;  Wang, J;  Guo, Y;  Song, HP;  Zheng, GL;  Wei, HY;  Yang, SY;  Zhu, QS;  Wang, ZG
发表日期: 2008
摘要: The theoretical electron mobility limited by dislocation scattering of a two-dimensional electron gas confined near the interface of AlxGa1-xN/GaN heterostructures was calculated. Based on the model of treating dislocation as a charged line, an exponentially varied potential was adopted to calculate the mobility. The estimated mobility suggests that such a choice can simplify the calculation without introducing significant deviation from experimental data, and we obtained a good fitting between the calculated and experimental results. It was found that the measured mobility is dominated by interface roughness and dislocation scattering at low temperatures if dislocation density is relatively high (>10(9) cm(-2)), and accounts for the nearly flattening-out behavior with increasing temperature.
KOS主题词: Aluminum oxide;  Dislocations;  Electron mobility;  Gallium compounds;  Amorphous semiconductors;  interface roughness;  Semiconductors--Junctions;  Electron gas;  Wide gap semiconductors
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Xu, XQ ; Liu, XL ; Han, XX ; Yuan, HR ; Wang, J ; Guo, Y ; Song, HP ; Zheng, GL ; Wei, HY ; Yang, SY ; Zhu, QS ; Wang, ZG .Dislocation scattering in AlxGa1-xN/GaN heterostructures ,APPLIED PHYSICS LETTERS,2008 ,93(18): Art. No. 182111
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