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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition
作者: Liang S;  Zhu HL;  Pan JQ;  Zhao LJ;  Wang LF;  Zhou F;  Shu HY;  Bian J;  An X;  Wang W
发表日期: 2008
摘要: Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with direrent growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the lowgrowth rate sample shows a greater blue shift of PL peak wave length. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blue shift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.
KOS主题词: atomic layer deposition
刊名: CHINESE PHYSICS B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liang, S ; Zhu, HL ; Pan, JQ ; Zhao, LJ ; Wang, LF ; Zhou, F ; Shu, HY ; Bian, J ; An, X ; Wang, W .Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition ,CHINESE PHYSICS B,2008 ,17(11): 4300-4304
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