SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InN 薄膜的MOCVD 生长及性质研究
黄勇
Subtype硕士
Thesis Advisor杨辉
2005
Degree Grantor中国科学院半导体研究所
Place of Conferral北京
Subject Area微电子学与固体电子学
Language中文
Date Available2009-04-13 ; 2009-07-09
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/5477
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
黄勇. InN 薄膜的MOCVD 生长及性质研究[D]. 北京. 中国科学院半导体研究所,2005.
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