SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
提高硅薄膜致密性的制备方法
谭满清; 赵妙
2007-03-28
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2005-09-22
Language中文
Application Number200510086466
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/3579
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
谭满清,赵妙. 提高硅薄膜致密性的制备方法[P]. 2007-03-28.
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