SEMI OpenIR  > 半导体超晶格国家重点实验室
半导体带电缺陷计算与超快光致相变机制研究
索曌君
Subtype博士
2021-11
Degree Grantor中国科学院大学
Place of Conferral中国科学院半导体研究所
Language中文
Date Available2021-11
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30663
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
索曌君. 半导体带电缺陷计算与超快光致相变机制研究[D]. 中国科学院半导体研究所. 中国科学院大学,2021.
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2022012-gk-博士-超晶格-索曌(20437KB)学位论文 限制开放CC BY-NC-SAApplication Full Text
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