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MBE growth of high quality InAsSb thin films on GaAs substrates with GaSb as buffer layers
Yong Li;   Xiaoming Li;   Ruiting Hao;   Jie Guo;   Yunpeng Wang;   Abuduwayiti Aierken;   Yu Zhuang;   Faran Chang;   Suning Cui;   Kang Gu;   Guoshuai Wei;   Xiaole Ma;   Guowei Wang;   Yingqiang Xu;   Zhichuan Niu
2020
Source PublicationJOURNAL OF CRYSTAL GROWTH
Volume542Pages:125688
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30457
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Yong Li; Xiaoming Li; Ruiting Hao; Jie Guo; Yunpeng Wang; Abuduwayiti Aierken; Yu Zhuang; Faran Chang; Suning Cui; Kang Gu; Guoshuai Wei; Xiaole Ma; Guowei Wang; Yingqiang Xu; Zhichuan Niu. MBE growth of high quality InAsSb thin films on GaAs substrates with GaSb as buffer layers[J]. JOURNAL OF CRYSTAL GROWTH,2020,542:125688.
APA Yong Li; Xiaoming Li; Ruiting Hao; Jie Guo; Yunpeng Wang; Abuduwayiti Aierken; Yu Zhuang; Faran Chang; Suning Cui; Kang Gu; Guoshuai Wei; Xiaole Ma; Guowei Wang; Yingqiang Xu; Zhichuan Niu.(2020).MBE growth of high quality InAsSb thin films on GaAs substrates with GaSb as buffer layers.JOURNAL OF CRYSTAL GROWTH,542,125688.
MLA Yong Li; Xiaoming Li; Ruiting Hao; Jie Guo; Yunpeng Wang; Abuduwayiti Aierken; Yu Zhuang; Faran Chang; Suning Cui; Kang Gu; Guoshuai Wei; Xiaole Ma; Guowei Wang; Yingqiang Xu; Zhichuan Niu."MBE growth of high quality InAsSb thin films on GaAs substrates with GaSb as buffer layers".JOURNAL OF CRYSTAL GROWTH 542(2020):125688.
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