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C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence
Xiangjun Shang;   Ben Ma;   Haiqiao Ni;   Zesheng Chen;   Shulun Li;   Yao Chen;   Xiaowu He;   Xingliang Su;   Yujun Shi;   Zhichuan Niu
2020
Source PublicationAIP ADVANCES
Volume10Issue:8Pages:085126
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30428
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xiangjun Shang; Ben Ma; Haiqiao Ni; Zesheng Chen; Shulun Li; Yao Chen; Xiaowu He; Xingliang Su; Yujun Shi; Zhichuan Niu. C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence[J]. AIP ADVANCES,2020,10(8):085126.
APA Xiangjun Shang; Ben Ma; Haiqiao Ni; Zesheng Chen; Shulun Li; Yao Chen; Xiaowu He; Xingliang Su; Yujun Shi; Zhichuan Niu.(2020).C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence.AIP ADVANCES,10(8),085126.
MLA Xiangjun Shang; Ben Ma; Haiqiao Ni; Zesheng Chen; Shulun Li; Yao Chen; Xiaowu He; Xingliang Su; Yujun Shi; Zhichuan Niu."C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence".AIP ADVANCES 10.8(2020):085126.
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