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Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness
Wei Liu;   Feng Liang;   Degang Zhao;   Jing Yang;   Desheng Jiang;   Jianjun Zhu ;   Zongshun Liu
2020
Source PublicationJOURNAL OF ELECTRONIC MATERIALS
Volume49Issue:6Pages:3877-3882
Indexed BySCI
Date Available2020
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30403
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Wei Liu; Feng Liang; Degang Zhao; Jing Yang; Desheng Jiang; Jianjun Zhu ; Zongshun Liu. Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness[J]. JOURNAL OF ELECTRONIC MATERIALS,2020,49(6):3877-3882.
APA Wei Liu; Feng Liang; Degang Zhao; Jing Yang; Desheng Jiang; Jianjun Zhu ; Zongshun Liu.(2020).Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness.JOURNAL OF ELECTRONIC MATERIALS,49(6),3877-3882.
MLA Wei Liu; Feng Liang; Degang Zhao; Jing Yang; Desheng Jiang; Jianjun Zhu ; Zongshun Liu."Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness".JOURNAL OF ELECTRONIC MATERIALS 49.6(2020):3877-3882.
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