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First principles study of Schottky barriers at Ga2O3(100)/metal interfaces
Ran Xu;   Na Lin;   Zhitai Jia;   Yueyang Liu;   Haoyuan Wang;   Yifei Yu ;   Xian Zhao
2020
Source PublicationRSC ADVANCES
Volume10Issue:25Pages:14746-14752
Indexed BySCI
Date Available2020
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/30394
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Ran Xu; Na Lin; Zhitai Jia; Yueyang Liu; Haoyuan Wang; Yifei Yu ; Xian Zhao. First principles study of Schottky barriers at Ga2O3(100)/metal interfaces[J]. RSC ADVANCES,2020,10(25):14746-14752.
APA Ran Xu; Na Lin; Zhitai Jia; Yueyang Liu; Haoyuan Wang; Yifei Yu ; Xian Zhao.(2020).First principles study of Schottky barriers at Ga2O3(100)/metal interfaces.RSC ADVANCES,10(25),14746-14752.
MLA Ran Xu; Na Lin; Zhitai Jia; Yueyang Liu; Haoyuan Wang; Yifei Yu ; Xian Zhao."First principles study of Schottky barriers at Ga2O3(100)/metal interfaces".RSC ADVANCES 10.25(2020):14746-14752.
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